MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 62

• Manufacturer Part Number: MT46H32M32LFCM-6:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1334-2

Figure 26: Terminating a READ Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
CK
CK
3
3
Notes:
Bank a,
Col n
Bank a,
Col n
READ
READ
T0
T0
1. BL = 4, 8, or 16.
2. BST = BURST TERMINATE command; page remains open.
3. D
4. Shown with nominal
5. CKE = HIGH.
1
1
OUT
CL = 2
n = data-out from column n.
BST
BST
T1
T1
CL = 3
2
2
T1n
D
t
OUT
AC,
T2
NOP
T2
NOP
62
t
DQSCK, and
D
T2n
OUT
T2n
D
1Gb: x16, x32 Mobile LPDDR SDRAM
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
D
Don’t Care
OUT
T3n
T4
T4
NOP
NOP
Transitioning Data
©2007 Micron Technology, Inc. All rights reserved.
READ Operation
T5
T5
NOP
NOP