MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 46

• Manufacturer Part Number: MT46H32M32LFCM-6:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1334-2

Figure 15: Initialize and Load Mode Registers
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
BA0, BA1
Address
V
DQS
V
DDQ
CK#
CKE
A10
DM
DQ
CK
DD
1
LVCMOS
HIGH LEVEL
Power-up: V
Notes:
NOP 2
T = 200µs
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DD
1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
and CK stable
t
IS
FRESH command; ACT = ACTIVE command.
NOP
T0
High-Z
High-Z
t
IH
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CH
t
CK
t
CL
All banks
t
IS
PRE
T1
t
IH
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RP
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AR
Ta0
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4
Tb0
1Gb: x16, x32 Mobile LPDDR SDRAM
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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Load standard
mode register
4
t
t
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Op-code
Op-code
BA0 = L,
IS
IS
IS
BA1 = L
Tc0
LMR
t
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IH
IH
IH
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Load extended
mode register
4
Op-code
Op-code
BA0 = L,
BA1 = H
LMR
Td0
©2007 Micron Technology, Inc. All rights reserved.
t
MRD
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4
ACT
Te0
Row
Bank
Row
Initialization
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Don’t Care
NOP
Tf0
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