MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 11

• Manufacturer Part Number: MT46H32M32LFCM-6:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1334-2

Ball Assignments and Descriptions
Figure 4: 60-Ball VFBGA – 10mm x 11.5mm (Top View)
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Note:
A
B
C
D
E
F
G
H
J
K
1. D9 is a test pin that must be tied to V
V
V
V
V
CKE
V
V
V
A9
A6
DDQ
DDQ
1
SSQ
SSQ
SS
SS
SS
UDQS
DQ15
DQ13
DQ11
UDM
DQ9
A11
CK
A7
A4
2
DQ14
DQ12
DQ10
V
DQ8
CK#
A12
NC
A8
A5
3
SSQ
11
4
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
5
SS
Ball Assignments and Descriptions
or V
SSQ
6
in normal operations.
A10/AP
V
DQ1
DQ3
DQ5
DQ7
WE#
A13
CS#
A2
7
DDQ
LDQS
CAS#
DQ0
DQ2
DQ4
DQ6
LDM
BA0
A0
A3
8
©2007 Micron Technology, Inc. All rights reserved.
V
TEST
V
RAS#
V
BA1
V
V
V
A1
DDQ
DDQ
9
SSQ
DD
DD
DD
1