MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 58

• Manufacturer Part Number: MT46H32M32LFCM-6:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1334-2

Figure 22: READ Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
t
AC,
D
58
t
T2n
T2n
DQSCK, and
OUT
D
OUT
NOP
NOP
1Gb: x16, x32 Mobile LPDDR SDRAM
D
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
t
DQSQ.
D
T3n
T3n
OUT
D
OUT
t
RP is met. Part of the row precharge
NOP
NOP
D
Don’t Care
T4
T4
OUT
©2007 Micron Technology, Inc. All rights reserved.
D
OUT
READ Operation
Transitioning Data
NOP
NOP
T5
T5