MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 87
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
SELF REFRESH Operation
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
The SELF REFRESH command can be used to retain data in the device while the rest of
the system is powered down. When in self refresh mode, the device retains data without
external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command, except that CKE is disabled (LOW). All command and address input signals
except CKE are “Don’t Care” during self refresh.
During self refresh, the device is refreshed as defined in the extended mode register.
(see Partial-Array Self Refresh (page 53).) An internal temperature sensor adjusts the
refresh rate to optimize device power consumption while ensuring data integrity. (See
Temperature-Compensated Self Refresh (page 52).)
The procedure for exiting self refresh requires a sequence of commands. First, CK must
be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP com-
mands issued for
During SELF REFRESH operation, refresh intervals are scheduled internally and may
vary. These refresh intervals may differ from the specified
the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH
command.
t
XSR to complete any internal refresh already in progress.
87
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SELF REFRESH Operation
t
REFI time. For this reason,
©2007 Micron Technology, Inc. All rights reserved.