MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 73
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MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 37: Random WRITE Cycles
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Address
DQ
DQS
CK#
DM
CK
3,4
Notes:
WRITE
Bank,
Col b
T0
1,2
1. Each WRITE command can be to any bank.
2. Programmed BL = 2, 4, 8, or 16 in cases shown.
3. D
4. b' (or x, n, a, g) = the next data-in following D
t
DQSS (NOM)
med burst order.
IN
b (or x, n, a, g) = data-in for column b (or x, n, q, g).
WRITE
Bank,
Col x
D
T1
IN
1,2
T1n
D
IN
WRITE
Bank,
Col n
T2
D
IN
1,2
73
T2n
D
IN
WRITE
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
Col a
T3
D
IN
1,2
T3n
D
Don’t Care
IN
IN
b (x, n, a, g) according to the program-
WRITE
Bank,
Col g
T4
D
IN
1,2
T4n
D
IN
Transitioning Data
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WRITE Operation
NOP
D
T5
IN
T5n
D
IN