MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 71
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 34: WRITE Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Notes:
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. An uninterrupted burst of 4 is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. D
Address
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
IN
CK
b = data-in for column b.
3
3
3
WRITE
Bank a,
Col b
T0
1,2
t DQSS
t DQSS
t DQSS
D
IN
71
NOP
D
T1
IN
D
D
IN
IN
Don’t Care
D
1Gb: x16, x32 Mobile LPDDR SDRAM
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
IN
IN
NOP
T2
D
IN
D
D
IN
IN
T2n
D
IN
Transitioning Data
D
IN
T3
NOP
©2007 Micron Technology, Inc. All rights reserved.
WRITE Operation