MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 59
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MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 23: Consecutive READ Bursts
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
OUT
t
READ
Bank,
READ
Bank,
Col b
Col b
AC,
T2
T2
1
59
t
DQSCK, and
D
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
D
T3n
T3n
OUT
OUT
D
D
T4
NOP
T4
NOP
OUT
OUT
D
T4n
T4n
D
OUT
OUT
Transitioning Data
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READ Operation
D
T5
NOP
T5
NOP
D
OUT
OUT
T5n
T5n
D
D
OUT
OUT