MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 58
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MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 22: READ Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
t
AC,
D
58
t
T2n
T2n
DQSCK, and
OUT
D
OUT
NOP
NOP
1Gb: x16, x32 Mobile LPDDR SDRAM
D
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
t
DQSQ.
D
T3n
T3n
OUT
D
OUT
t
RP is met. Part of the row precharge
NOP
NOP
D
Don’t Care
T4
T4
OUT
©2007 Micron Technology, Inc. All rights reserved.
D
OUT
READ Operation
Transitioning Data
NOP
NOP
T5
T5