MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 42

• Manufacturer Part Number: MT46H64M16LFCK-6 IT:A TR
• Description: IC DDR SDRAM 1GBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-6 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1335-2

PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all
5. All states and sequences not shown are illegal or reserved.
6. Requires appropriate DM masking.
7. A WRITE command can be applied after the completion of the READ burst; otherwise, a
banks are idle.
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
From
Command
READ with
Auto Precharge
To Command
READ or READ with auto precharge
WRITE or WRITE with auto precharge
PRECHARGE
ACTIVE
42
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(with Concurrent Auto
©2007 Micron Technology, Inc. All rights reserved.
Minimum Delay
[CL + (BL/2)]
Precharge)
(BL/2) ×
1
1
Truth Tables
t
t
CK
CK
t
CK
t
CK