P5010NXN1QMB Freescale Semiconductor, P5010NXN1QMB Datasheet - Page 78

• Manufacturer Part Number: P5010NXN1QMB
• Description: Processors - Application Specialized P5010 Ext Tmp NoEnc 1600/1200 r2.0
• Manufacturer: Freescale Semiconductor

Specifications of P5010NXN1QMB

• Rohs: yes

Electrical Characteristics
This figure provides the AC test load for the DDR3 and DDR3L controller bus.
2.10
This section describes the DC and AC electrical specifications for the eSPI interface.
2.10.1
This table provides the DC electrical characteristics for the eSPI interface operating at CV
This table provides the DC electrical characteristics for the eSPI interface operating at CV
78
For recommended operating conditions, see
For recommended operating conditions, see
Input high voltage
Input low voltage
Input high voltage
Input low voltage
Input current (V
Output high voltage
(CV
Output low voltage
(CV
Note:
1. The min V
2. The symbol V
DD
DD
Conditions.”
= min, I
= min, I
eSPI
eSPI DC Electrical Characteristics
IL
OH
OL
IN
and max V
= 2 mA)
IN
= 0 V or V
= –2 mA)
, in this case, represents the CV
Parameter
Parameter
Output
P5020/P5010 QorIQ Integrated Processor Hardware Specifications, Rev. 0
IH
Table 28. eSPI DC Electrical Characteristics (CV
IN
Table 29. eSPI DC Electrical Characteristics (CV
Figure 13. DDR3 and DDR3L Controller Bus AC Test Load
values are based on the respective min and max CV
= CV
DD
)
Table
Table
Z
3.
3.
0
= 50 Ω
IN
symbol referenced in
Symbol
V
V
Symbol
V
V
I
IN
OH
OL
IH
IL
V
V
IH
IL
R
Min
L
2.0
2.4
—
—
—
= 50 Ω
Min
1.7
Section 2.1.2, “Recommended Operating
—
IN
DD
values found in
DD
= 3.3 V)
GV
Max
= 2.5 V)
±40
0.8
0.4
—
—
DD
DD
Max
DD
0.7
—
/2
= 3.3 V.
= 2.5 V.
1,2
Table
Freescale Semiconductor
Unit
μA
V
V
V
V
3.
Unit
V
V
Note
Note
—
—
1
1
2
1
1