P5010NXN1QMB Freescale Semiconductor, P5010NXN1QMB Datasheet - Page 71

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P5010NXN1QMB

Manufacturer Part Number
P5010NXN1QMB
Description
Processors - Application Specialized P5010 Ext Tmp NoEnc 1600/1200 r2.0
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of P5010NXN1QMB

Rohs
yes
2.9.1
This table provides the recommended operating conditions for the DDR SDRAM controller when interfacing to DDR3
SDRAM.
This table provides the recommended operating conditions for the DDR SDRAM controller when interfacing to DDR3L
SDRAM.
Freescale Semiconductor
For recommended operating conditions, see
For recommended operating conditions, see
I/O reference voltage
Input high voltage
Input low voltage
I/O leakage current
Note:
I/O reference voltage
Input high voltage
Input low voltage
1. GV
2. MV
3. V
4. The voltage regulator for MV
5. Input capacitance load for DQ, DQS, and DQS are available in the IBIS models.
6. Output leakage is measured with all outputs disabled, 0 V
supply may or may not be from the same source.
noise on MV
equal to MV
DC level of MV
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made, and it is expected to be
is expected to be within 50 mV of the DRAM’s voltage supply at all times. The DRAM’s and memory controller’s voltage
n is expected to be equal to 0.5 × GV
DDR3 and DDR3L SDRAM Interface DC Electrical Characteristics
Parameter
Table 21. DDR3L SDRAM Interface DC Electrical Characteristics (GV
REF
Table 20. DDR3 SDRAM Interface DC Electrical Characteristics (GV
REF
Parameter
REF
n with a min value of MV
n may not exceed the MV
n.
P5020/P5010 QorIQ Integrated Processor Hardware Specifications, Rev. 0
REF
n must meet the specifications stated in
Table
Table
REF
MV
Symbol
3.
3.
REF
V
V
DD
REF
n – 0.04 and a max value of MV
IH
IL
n DC level by more than ±1% of the DC value (that is, ±15 mV).
Symbol
MV
and to track GV
n
V
I
V
OZ
REF
IH
IL
n
MV
0.49 × GV
REF
MV
V
OUT
GND
0.49 × GV
DD
Min
n + 0.090
REF
DC variations as measured at the receiver. Peak-to-peak
GND
Min
–50
n + 0.100
DD
GV
DD
DD
Table
.
REF
23.
n + 0.04. V
MV
0.51 × GV
MV
REF
0.51 × GV
GV
REF
Max
n – 0.090
GV
Max
DD
n – 0.100
50
TT
DD
DD
DD
DD
should track variations in the
DD
Electrical Characteristics
= 1.5 V)
= 1.35 V)
Unit
Unit
V
V
V
1
μA
V
V
V
1
2, 3,
2, 3,
Note
Note
5
5
5
5
6
4
4
71

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