P4C167 PYRAMID [Pyramid Semiconductor Corporation], P4C167 Datasheet - Page 5

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P4C167

Manufacturer Part Number
P4C167
Description
ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
AC CHARACTERISTICS - WRITE CYCLE
(V
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
Notes:
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
11. Write Cycle Time is measured from the last valid address to the first
Document # SRAM106 REV A
Symbol
t
t
t
t
t
t
t
t
t
t
9. CE and WE must be LOW for WRITE cycle.
CW
AW
WC
AS
WP
WZ
AH
DW
DH
OW
CC
in a high impedance state.
transition address.
= 5V ± 10%, All Temperature Ranges)
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up
Time
Write Pulse Width
Address Hold Time
from End of Write
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
Parameter
Min Max
10
8
8
0
8
0
6
0
0
–10
6
Min
12
10
10
10
0
0
7
0
0
(2)
–12
Max
7
Min
15
12
12
10
2
0
0
0
0
–15
Max
WE
WE
WE CONTROLLED)
WE
8
Min
20
15
15
15
13
0
0
0
0
–20
Max
12
Min
25
20
20
20
15
0
0
0
0
–25
Max
15
(9)
Min
35
25
25
25
20
0
0
0
0
–35
Max
17
Min
45
30
30
30
25
0
0
0
0
–45
Max
Page 5 of 10
20
P4C167
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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