P4C167 PYRAMID [Pyramid Semiconductor Corporation], P4C167 Datasheet - Page 3

• Manufacturer Part Number: P4C167
• Description: ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

POWER DISSIPATION CHARACTERISTICS VS. SPEED
*V
DATA RETENTION CHARACTERISTICS (P4C167L Military Temperature Only)
*T
§t
†
DATA RETENTION WAVEFORM
Symbol
Document # SRAM106 REV A
Symbol
This parameter is guaranteed but not tested.
V
I
t
t
RC
A
CCDR
CDR
R
CC
DR
†
= +25¹C
I
= Read Cycle Time
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = V
Dynamic Operating Current*
V
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
CC
for Data Retention
Parameter
Parameter
Commercial
Industrial
Military
Test Conditons
Temperature
CE
V
or V
IN
Range
V
V
IN
CC
CC
–0.2V,
0.2V
–0.2V
–10
180
N/A
N/A
Min
t
2.0
RC
0
§
–12
170
180
N/A
2.0V
10
–15
160
170
170
Typ.*
V
IL
.
CC
=
3.0V
–20
155
160
160
15
150
155
–25
155
2.0V
600
V
Max
–35
N/A
150
150
CC
=
900
3.0V
Page 3 of 10
N/A
N/A
145
–45
P4C167
Unit
Unit
µA
ns
mA
mA
mA
ns
V