P4C149 PYRAMID [Pyramid Semiconductor Corporation], P4C149 Datasheet - Page 4

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P4C149

Manufacturer Part Number
P4C149
Description
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet

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AC CHARACTERISTICS—WRITE CYCLE
(V
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE
Notes:
10. If CE goes HIGH simultaneously with WE high, the output remains in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first transition address.
Document # SRAM104 REV B
9. CE and WE must be LOW for WRITE cycle.
Sym
t
t
t
t
t
t
t
t
t
t
CC
WC
CW
DW
OW
AW
WP
DH
WZ
AS
AH
= 5V ± 10%, All Temperature Ranges)
P4C148/P4C149
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time from End of Write
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
Parameter
(2)
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
10
8
8
0
8
0
5
0
0
-10
5
WE
WE
CE
CE
CE/CS
WE
WE CONTROLLED)
CE
CS
CS
CS
CS CONTROLLED)
12
10
10
10
0
0
6
0
0
-12
6
15
12
12
12
0
0
7
0
0
-15
7
(9)
20
16
16
16
0
0
9
0
0
(9)
-20
7
25
20
20
20
12
0
0
0
0
-25
8
35
25
25
25
16
0
0
0
0
-35
12
45
30
30
30
20
0
0
0
0
-45
Page 4 of 10
15
55
35
35
35
25
0
0
0
0
-55
20

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