P4C1049 PYRAMID [Pyramid Semiconductor Corporation], P4C1049 Datasheet - Page 8
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P4C1049
Manufacturer Part Number
P4C1049
Description
HIGH SPEED 512K x 8 STATIC CMOS RAM
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
1.P4C1049.pdf
(12 pages)
* including scope and test fixture.
Note:
Because of the ultra-high speed of the P4C1049, care must be taken
when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads
that cause supply bounce must be avoided by bringing the V
ground planes directly up to the contactor fingers. A 0.01 µF high
frequency capacitor is also required between V
Document # SRAM128 REV OR
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
P4C1049
Figure 1. Output Load
See Figures 1 and 2
CC
GND to 3.0V
and ground. To avoid
1.5V
1.5V
3ns
CC
and
signal reflections, proper termination must be used; for example, a 50
test environment should be terminated into a 50
(Thevenin Voltage) at the comparator input, and a 116
be used in series with D
TRUTH TABLE
Mode
Standby
Standby
D
Read
Write
OUT
Disabled
Figure 2. Thevenin Equivalent
C E
C E
C E
C E
C E
H
L
X
L
L
OUT
to match 166
O E
O E
O E
O E
O E
H
X
X
L
X
W E
W E
W E
W E
W E
H
H
X
X
L
(Thevenin Resistance).
High Z
High Z
High Z
High Z
D
I/O
OUT
load with 1.73V
Page 8 of 12
resistor must
Standby
Standby
Power
Active
Active
Active