P4C1049 PYRAMID [Pyramid Semiconductor Corporation], P4C1049 Datasheet - Page 3

• Manufacturer Part Number: P4C1049
• Description: HIGH SPEED 512K x 8 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

DATA RETENTION CHARACTERISTICS (P4C1049L Military Temperature Only)
*T
§t
†
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
*V
Document # SRAM128 REV OR
Symbol
Symbol
This parameter is guaranteed but not tested.
V
I
t
t
RC
A
R
CCDR
CDR
CC
= +25°C
DR
†
I
= Read Cycle Time
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = V
Dynamic Operating Current*
V
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
CC
for Data Retention
Parameter
Parameter
Commercial
Industrial
Military
CE
Test Conditons
V
Temperature
IN
or V
Range
V
V
IN
CC
CC
–0.2V,
0.2V
–0.2V
220
N/A
–15
N/A
Min
t
3.0
RC
0
§
–20
185
190
200
V
180
185
–25
195
CC
IL
Typ.*
, OE = V
= 3.0V
2
N/A
–35
175
185
IH
.
N/A
–45
N/A
175
V
CC
Max
–55
N/A
N/A
170
= 3.0V
3
Page 3 of 12
–70
N/A
N/A
165
P4C1049
Unit
mA
Unit
ns
ns
mA
mA
mA
V