P4C1026 PYRAMID [Pyramid Semiconductor Corporation], P4C1026 Datasheet - Page 2

• Manufacturer Part Number: P4C1026
• Description: ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

MAXIMUM RATINGS
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
Document # SRAM127 REV E
Industrial
Commercial
Military
Symbol
Symbol
V
V
T
Grade(2)
CC
TERM
A
V
V
V
V
V
V
I
V
I
I
I
SB1
LO
SB
HC
CD
OH
LI
LC
OL
IH
P4C1026
IL
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
-55°C to +125°C
–40°C to +85°C
Parameter
Temperature
0°C to +70°C
Ambient
Parameter
(1)
GND
0V
0V
0V
–55 to +125
–0.5 to +7
V
–0.5 to
V
I
Value
I
V
V
CE ≥ V
V
CE ≥ V
V
V
V
V
CC
OL
OH
CC
CC
IN
CC
OUT
CC
CC
IN
+0.5
= +8 mA, V
5.0V ± 10%
= –4 mA, V
5.0V ± 10%
= GND to V
≤ V
= Max ., f = Max., Outputs Open
= Max., f = 0, Outputs Open
5.0V ± 10%
= Min., I
= Max.
= Max., CE = V
= GND to V
IH
HC
LC
Test Conditions
V
CC
or V
Unit
°C
IN
V
V
IN
= –18 mA
CC
CC
CC
≥ V
= Min.
CC
= Min.
HC
IH
CAPACITANCES
V
Symbol
C
C
(2)
Symbol
T
T
P
I
OUT
CC
BIAS
STG
T
IN
OUT
= 5.0V, T
Input Capacitance
Output Capacitance
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
A
Parameter
= 25°C, f = 1.0MHz
Parameter
(4)
V
Conditions
–0.5
–0.5
CC
V
Min
___
___
2.2
2.4
V
–5
–5
OUT
–0.2
IN
P4C1026
(3)
(3)
–55 to +125
–65 to +150
= 0V
= 0V
Value
V
V
1.0
50
CC
CC
Max
–1.2
0.8
0.2
0.4
+5
35
10
Page 2 of 10
+5
+0.5
+0.5
Typ.
10
7
Unit
Unit
Unit
mA
mA
µA
µA
mA
pF
pF
°C
°C
W
V
V
V
V
V
V
V