H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 9

• Manufacturer Part Number: H55S1G22MFP-60
• Description: 1Gb (32Mx32bit) Mobile SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

CAPACITANCE
DC CHARACTERRISTICS I
Note :
1. V
2. D
3. I
4. I
Rev 1.2 / Jun. 2008
Input capacitance
Data input/output capacitance
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
OUT
OUT
IN
OUT
= 0 to 1.8V. All other pins are not tested under V
= - 0.1mA
= + 0.1mA
is disabled. V
Parameter
Parameter
OUT
(T
A
= 0 to 1.95V.
= 25
o
C, f=1MHz)
Symbol
(T
V
V
I
I
A
LO
OH
LI
OL
= -30 to 85
A0~A13, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
IN
DQ0 ~ DQ31
=0V.
o
C)
0.9*VDDQ
CLK
Pin
Min
-1.5
-1
-
1Gbit (32Mx32bit) Mobile SDR Memory
0.1*VDDQ
Max
1.5
1
-
Symbol
CI/O
CI1
CI2
H55S1G(2/3)2MFP Series
Min
1.5
1.5
2.0
Unit
uA
uA
V
V
6/H
Max
3.5
3.0
4.5
Note
Unit
1
2
3
4
pF
pF
pF
11
9