H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 32

• Manufacturer Part Number: H55S1G22MFP-60
• Description: 1Gb (32Mx32bit) Mobile SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Com m and
Address
CLK
DQ
DQ
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
Notes :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed;
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided
Rev 1.2 / Jun. 2008
the preceding read command, the write command can be performed after an interval of no less than 1 clock.
However, DQM must be set High so that the output buffer becomes High-Z before data input.
it is necessary to separate the two commands with a precharge command and a bank active command.
that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before
data input.
1) DO
n
= D ata O ut from colum n n; D I b = D ata In to colum n b
BA, Col
READ
n
CL = 2
CL = 3
BURST
Do
n
Do
Do
n'
n
Read to Write
Do
n'
1Gbit (32Mx32bit) Mobile SDR Memory
W RITE
BA, Col
b
D
D
I
I
b0
b0
H55S1G(2/3)2MFP Series
D
D
I
I
b1
b1
D
D
I
I
b2
b2
DI
DI
b3
b3
Don't Care
11
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