H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 13

• Manufacturer Part Number: H55S1G22MFP-60
• Description: 1Gb (32Mx32bit) Mobile SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

AC CHARACTERISTICS II
Rev 1.2 / Jun. 2008
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
AUTO REFRESH Period
CAS to CAS Delay
Write Command to Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data Output
High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
CAS Latency=3
CAS Latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RCD
RAS
RP
RRD
RFC
CCD
WTL
DPL
DAL
DQZ
DQM
MRD
PROZ3
PROZ2
DPE
XSR
REF
1CLK
tCKS
Min
110
120
60
18
42
18
12
166MHz
+
1
0
2
2
0
2
3
2
-
1Gbit (32Mx32bit) Mobile SDR Memory
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1CLK
tCKS
72.5
22.5
22.5
Min
110
120
133MHz
45
15
t
+
1
0
2
2
0
2
3
2
-
DPL
+t
100K
Max
H55S1G(2/3)2MFP Series
RP
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1CLK
tCKS
Min
28.5
28.5
110
120
105MHz
90
60
19
+
1
0
2
2
0
2
3
2
-
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
ns
11
13