H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 33

• Manufacturer Part Number: H55S1G22MFP-60
• Description: 1Gb (32Mx32bit) Mobile SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Com m and
Address
CLK
D Q
D Q
READ to PRECHARGE
Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
Note that part of the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time
(as described above) provides the same operation that would result from the same fixed-length burst with auto pre-
charge.
The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at
the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to trun-
cate fixed-length or full-page bursts.
Rev 1.2 / Jun. 2008
1) D O
2) Note that Precharge m ay not be issued before tRAS ns after the ACTIVE com m and for applicable banks.
3) The ACTIVE com m and m ay be applied if tRC has been m et.
n
= D ata O ut from colum n n
BA, Col
READ
n
CL = 2
CL = 3
D o
n
D o
READ to PRECHARGE
n
A, All
Bank
PRE
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
tRP
D on't Care
ACT
Row
BA,
11
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