K4H281638L-LCB3 SAMSUNG [Samsung semiconductor], K4H281638L-LCB3 Datasheet - Page 27

• Manufacturer Part Number: K4H281638L-LCB3
• Description: 128Mb L-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

24.0 IBIS : I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 4, 5 and 6 show the driver characteristics graphically, and tables 8, 9 and 10 show the same data in tabular format suitable for
input into simulation tools. The driver characteristcs evaluation conditions are:
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figures 4, 5 and 6.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity
K4H281638L
the of the V-I curve of Figures 4, 5 and 6.
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Figure 4. I/V characteristics for input/output buffers:Pulldown(above) and pullup(below)
Typical
Minimum
Maximum
160
140
120
100
-100
-120
-140
-160
-180
-200
-220
80
60
40
20
-20
-40
-60
-80
0
0
0.0
0.0
Pull-up Characteristics for Full Strength Output Driver
Pull-down Characteristics for Full Strength Output Driver
25×C
70×C
0×C
0.5
V
V
V
DD
DD
DD
/V
/V
/V
DDQ
DDQ
DDQ
1.0
1.0
= 2.5V, typical process
= 2.3V, slow-slow process
= 2.7V, fast-fast process
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1.5
2.0
2.0
2.5
Vout(V)
Vout(V)
Rev. 1.2 Feburary 2009
DDR SDRAM
+/-
Typical High
Minumum
Typical Low
Maximum
Typical Low
Typical High
Maximum
Minimum
10%, for device drain to