K4H281638L-LCB3 SAMSUNG [Samsung semiconductor], K4H281638L-LCB3 Datasheet - Page 20

• Manufacturer Part Number: K4H281638L-LCB3
• Description: 128Mb L-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H281638L
17.0 AC Operating Conditions
Note :
1. V
2. The value of V
3. V
18.0 AC Overshoot/Undershoot specification for Address and Control Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V
The area between the undershoot signal and GND must be less than or equal to
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
I/O Reference Voltage
Peak-to-peak noise (non-common mode) on V
DC error and an additional
ID
REF
is the magnitude of the difference between the input level on CK and the input level on CK.
is expected to equal V
IX
is expected to equal 0.5*V
Parameter/Condition
±
DDQ
25mV for AC noise. This measurement is to be taken at the nearest V
/2 of the transmitting device and to track variations in the DC level of the same.
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
DDQ
Maximum Amplitude = 1.5V
0
REF
of the transmitting device and must track variations in the dc level of the same.
AC overshoot/Undershoot Definition
DD
0.5
may not exceed
0.6875
must be less than or equal to
V
DD
1.0
Area
Overshoot
1.5
2.0
±
2.5
20 of 32
2 percent of the DC value. Thus, from V
V
Symbol
V
V
V
V
REF
3.0
IH
ID
IX
IL
Tims(ns)
(AC)
(AC)
(AC)
(AC)
(AC)
3.5
4.0
4.5
0.5*V
0.45 x V
V
5.0
Maximum Amplitude = 1.5V
REF
Min
0.7
5.5
DDQ
+ 0.31
undershoot
GND
6.0
DDQ
-0.2
6.3125
REF
6.5
by-pass capacitor.
DDR400
0.5*V
4.5 V-ns
4.5 V-ns
0.55 x V
7.0
V
1.5 V
1.5 V
V
REF
DDQ
DDQ
Max
DDQ
Rev. 1.2 Feburary 2009
- 0.31
/2, V
+0.6
DDQ
Specification
+0.2
REF
DDR SDRAM
is allowed
Unit
V
V
V
V
V
DDR333
4.5 V-ns
4.5 V-ns
±
1.5 V
1.5 V
25mV for
Note
1
2
3