K4H281638L-LCB3 SAMSUNG [Samsung semiconductor], K4H281638L-LCB3 Datasheet - Page 21

• Manufacturer Part Number: K4H281638L-LCB3
• Description: 128Mb L-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H281638L
19.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
DD
V
DDQ
Area
must be less than or equal to
Overshoot
21 of 32
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.2 Feburary 2009
Specification
DDR SDRAM
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V