K4H281638L-LCB3 SAMSUNG [Samsung semiconductor], K4H281638L-LCB3 Datasheet - Page 16

• Manufacturer Part Number: K4H281638L-LCB3
• Description: 128Mb L-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

11.0 Absolute Maximum Rating
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
2M x 16Bit x 4 Banks Double Data Rate SDRAM
10.0 General Description
The K4H281638L is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 2,097,152 words by 16bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to
500Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and
programmable latencies allow the device to be useful for a variety of high performance memory system applications.
12.0 DC Operating Conditions
Note :
1. V
2. V
3. V
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
K4H281638L
Supply voltage (for device with a nominal V
Supply voltage (for device with a nominal V
I/O Supply voltage (for device with a nominal V
I/O Supply voltage (for device with a nominal V
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Full strengh driver) ; V
Output LowCurrent(Full strengh driver) ; V
Output High Current(Week strengh driver) ; V
Output Low Current(Week strengh driver) ; V
Output High Current(Mached strengh driver) ; V
Output Low Current(Mached strengh driver) ; V
not exceed +/-2% of the dc value.
ations in the DC level of V
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
TT
REF
ID
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
is not applied directly to the device. V
Voltage on V
is the magnitude of the difference between the input level on CK and the input level on CK.
is expected to be equal to 0.5*V
Voltage on any pin relative to V
Storage temperature
DD
Short circuit current
Power dissipation
& V
Parameter
DDQ
REF
supply relative to V
Parameter
DDQ
TT
of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on V
is a system supply for signal termination resistors, is expected to be set equal to V
OUT
SS
DD
DD
OUT
OUT
OUT
of 2.5V for DDR333, 400)
of 2.5V for
=0.388V
DD
DD
OUT
=V
OUT
SS
=0.538V
=V
of 2.5V for DDR333, 400)
of 2.5V for DDR500)
DDQ
=V
=0.6505V
DDQ
DDQ
-0.388V
-0.538V
DDR500)
-0.6505V
Recommended operating conditions(Voltage referenced to V
16 of 32
V
V
Symbol
DD
IN
T
, V
I
P
, V
STG
OS
D
OUT
DDQ
V
Symbol
V
V
V
V
I
V
V
V
IH
IN
ID
IL
(Ratio)
V
V
V
I
I
I
I
I
I
I
DDQ
DDQ
REF
OH
OH
OH
OZ
OL
OL
OL
(DC)
(DC)
(DC)
(DC)
DD
DD
I
TT
I
-55 ~ +150
-0.5 ~ 3.6
0.49*V
V
1.0 ~ 3.6
V
REF
Value
REF
2.375
2.375
-13.8
-18.2
-15.5
0.36
0.71
16.5
20.2
50
Min
-0.3
-0.3
2.3
2.3
1
17
-2
-5
+0.15
-0.04
DDQ
Rev. 1.2 Feburary 2009
0.51*V
V
V
V
V
V
DDR SDRAM
REF
REF
DDQ
DDQ
DDQ
2.625
2.625
-16.1
-21.8
-18.9
Max
19.2
24.5
21.3
2.7
2.7
1.4
2
5
+0.04
-0.15
+0.3
+0.3
+0.6
DDQ
REF
SS
, and must track vari-
=0V,
Unit
mA
°C
Unit
W
V
V
mA
mA
mA
mA
mA
mA
uA
uA
V
V
V
V
V
V
V
V
V
V
TA=0 to
-
REF
Note
70°C)
1
2
3
4
may