MT9LSDT1672G-10E MICRON [Micron Technology], MT9LSDT1672G-10E Datasheet - Page 8

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MT9LSDT1672G-10E

Manufacturer Part Number
MT9LSDT1672G-10E
Description
SYNCHRONOUS DRAM MODULE
Manufacturer
MICRON [Micron Technology]
Datasheet
SERIAL PRESENCE-DETECT MATRIX (continued)
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
8, 16 Meg x 72 PC133/PC100 Registered SDRAM DIMMs
ZM28_3.p65 – Rev. 4/00
99-125
36-61
65-71
73-90
95-98
BYTE
126
127
34
35
62
64
72
91
92
93
94
30
31
32
33
63
2. x = Variable Data.
MINIMUM RAS# PULSE WIDTH,
(
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME,
t
COMMAND AND ADDRESS HOLD TIME,
DATA SIGNAL INPUT SETUP TIME,
DATA SIGNAL INPUT HOLD TIME,
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE (CONT.)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
MANUFACTURER-SPECIFIC DATA (RSVD)
SYSTEM FREQUENCY
SDRAM COMPONENT AND CLOCK DETAIL
AS,
t
t
AH,
RAS MODULE =
t
CMS
t
CMH
DESCRIPTION
t
RC -
t
RP)
t
t
DH
DS
ENTRY (VERSION)
1.5 (-13E/-133)
0.8 (-13E/-133)
100/133 MHz
1.5 (-13E/-133)
0.8 (--13E/133)
64MB/128MB
MICRON
REV. 1.2
45 (-13E)
44 (-133)
50 (-10E)
1 (-10E)
2 (-10E)
1 (-10E)
2 (-10E)
-133
-13E
-10E
1
2
3
4
5
6
7
8
9
0
8
REGISTERED SDRAM DIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT9LSDT872
2D
0D
2C
10
15
20
08
10
00
12
C5
2C
01
02
03
04
05
06
07
08
09
01
02
03
04
05
06
07
08
09
00
64
8F
32
10
15
20
08
88
FF
xx
xx
xx
xx
8, 16 MEG x 72
MT9LSDT1672
©1999, Micron Technology, Inc.
ADVANCE
2D
2C
10
15
20
08
10
00
12
CE
16
2C
01
02
03
04
05
06
07
08
09
01
02
03
04
05
06
07
08
09
00
64
32
20
15
20
08
99
FF
8F
xx
xx
xx
xx

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