MT9LSDT1672G-10E MICRON [Micron Technology], MT9LSDT1672G-10E Datasheet - Page 13
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MT9LSDT1672G-10E
Manufacturer Part Number
MT9LSDT1672G-10E
Description
SYNCHRONOUS DRAM MODULE
Manufacturer
MICRON [Micron Technology]
Datasheet
1.MT9LSDT1672G-10E.pdf
(18 pages)
CAPACITANCE
NOTE: This parameter is sampled. V
SDRAM COMPONENT* AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 4, 5, 6, 7)
*Specifications for the SDRAM components used on the module.
8, 16 Meg x 72 PC133/PC100 Registered SDRAM DIMMs
ZM28_3.p65 – Rev. 4/00
PARAMETER
Input Capacitance: A0-A11, BA0, BA1, RAS#, CAS#, WE#
Input Capacitance: S0#, S2#, CKE0, DQMB0#-DQMB7#
Input Capacitance: CK0
Input Capacitance: REGE
Input Capacitance: SCL, SA0-SA2, WP
Input/Output Capacitance: DQ0-DQ63, CB0-CB7, SDA
AC CHARACTERISTICS
PARAMETER
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high level width
CLK low level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 cycles)
AUTO REFRESH PERIOD
PRECHARGE command period
ACTIVE bank A to ACTIVE bank B command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
DD
`
= +3.3V; f = 1 MHz.
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
CMH
t
t
t
CKH
CMS
t
OH
t
t
t
t
t
t
t
CKS
t
t
t
t
RAS
t
RCD
t
RRD
XSR
REF
RFC
WR
AH
DH
OH
AC
AC
AS
CH
CK
CK
DS
HZ
HZ
t
CL
LZ
RC
RP
T
N
1 CLK +
MIN
7ns
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
2.7
1.8
0.3
37
60
15
66
15
14
14
67
7
1
-13E
13
120,000
MAX
5.4
5.4
5.4
5.4
1.2
64
1 CLK +
7.5ns
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
2.7
1.8
0.3
REGISTERED SDRAM DIMMs
10
44
66
20
66
20
15
15
75
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-133
120,000
MAX
5.4
5.4
1.2
64
6
6
1 CLK +
MIN
7ns
1.8
0.3
10
50
70
20
70
20
20
15
80
1
2
3
3
8
1
2
1
2
1
2
1
3
SYMBOL
-10E
8, 16 MEG x 72
C
120,000
C
C
C
C
C
I
MAX
I
I
I
I
I
O
1
2
3
4
5
1.2
64
6
6
6
7
MAX UNITS
UNITS
©1999, Micron Technology, Inc.
ADVANCE
12
m s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
8
6
5
8
–
NOTES
p F
p F
p F
p F
p F
p F
10
10
11
12
13
14
8
9
9