MT9LSDT1672G-10E MICRON [Micron Technology], MT9LSDT1672G-10E Datasheet - Page 11

• Manufacturer Part Number: MT9LSDT1672G-10E
• Description: SYNCHRONOUS DRAM MODULE
• Manufacturer: MICRON [Micron Technology]

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature, T
Storage Temperature (plastic) .......... -55°C to +125°C
Power Dissipation ................................................ 18W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 2) (V
NOTE: 1. All voltages referenced to V
8, 16 Meg x 72 PC133/PC100 Registered SDRAM DIMMs
ZM28_3.p65 – Rev. 4/00
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT:
DQs are disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Relative to V
2. An initial pause of 100µs is required after power-up, followed by two AUTO REFRESH commands, before proper device
3. V
4. Input leakage values based on register electrical characteristics, V
operation is ensured. The two AUTO REFRESH command wake-ups should be repeated any time the
requirement is exceeded.
the cycle rate. V
third of the cycle rate.
IH
overshoot: V
DD
SS
DD
Supply Relative to V
...................................... -1V to +4.6V
IN
= +3.3V ±0.3V)
≤ V
OUT
DD
OUT
IL
IH
= 4mA)
OUT
undershoot: V
(MAX) = V
A
= -4mA)
(ambient) ... 0°C to +70°C
≤ V
DD
SS
DD
.
+ 2V for a pulse width ≤ 10ns, and the pulse width cannot be greater than one third of
SS
IL
(MIN) = -2V for a pulse width ≤ 10ns, and the pulse width cannot be greater than one
. -1V to +4.6V
11
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
DD
REGISTERED SDRAM DIMMs
SYMBOL
= 3.6V.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
I
I
OZ
DD
I
OH
OL
IH
IL
1
MIN
-0.5
2.4
-5
-5
3
2
–
8, 16 MEG x 72
V
DD
MAX
3.6
0.8
0.4
5
5
–
+ 0.3
t
REF refresh
UNITS NOTES
©1999, Micron Technology, Inc.
µA
µA
ADVANCE
V
V
V
V
V
3
3
4