S71PL512ND0JAW5B0 SPANSION [SPANSION], S71PL512ND0JAW5B0 Datasheet - Page 82

• Manufacturer Part Number: S71PL512ND0JAW5B0
• Description: Two S29PL256N Devices (32 M x 16-Bit) CMOS 3.0-Volt only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

20 Functional Description
21 Absolute Maximum Ratings
22 DC Recommended Operating Conditions
23 Capacitance
80
Ta = 25°C, f = 1 MHz
Legend: X = Don’t care (must be low or high state).
Note: Stresses greater than those listed under
Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maxi-
mum rating conditions longer than one second may affect reliability.
Notes:
1.
2.
3.
4.
Note: This parameter is sampled periodically and is not 100% tested.
Deselected
Deselected
Deselected
Output Disabled
Outputs Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Voltage on any pin relative to V
Voltage on V
Power Dissipation
Operating Temperature
Symbol
V
V
V
Symbol
V
TA=-40 to 85°C, unless otherwise specified.
Overshoot: V
Undershoot: -1.0V in case of pulse width ≤ 20ns.
Overshoot and undershoot are sampled, not 100% tested.
CC
SS
IH
IL
C
C
Mode
IN
IO
CC
Power Supply Voltage
Input High Voltage
Input Low Voltage
supply relative to V
CC
Parameter
+1.0V in case of pulse width ≤ 20ns.
Ground
CS1#
H
X
X
L
L
L
L
L
L
L
L
Input/Output Capacitance
Item
Input Capacitance
SS
Parameter
CS2
SS
H
H
H
H
H
H
H
H
X
L
X
2.2 (16Mb, 32Mb, 128Mb)
pSRAM Type 2
OE#
X
X
X
H
H
X
X
X
L
L
L
0.8 x V
P r e l i m i n a r y
-0.2 (Note 3)
Absolute Maximum Ratings
Min
2.7
CC
0
WE#
X
X
X
H
H
H
H
H
L
L
L
(64Mb
LB#
X
X
H
X
H
H
L
L
L
L
L
V
Symbol
IN ,
V
P
T
Test Condition
CC
Typ
V
D
A
2.9
—
—
0
OUT
UB#
V
V
OUT
X
X
H
X
H
H
L
L
L
L
L
may cause permanent damage to the device.
IN
= 0V
= 0V
V
CC
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
+ 0.3 (16Mb, 32Mb, 128Mb)
D
D
D
D
OUT
OUT
IN
IN
–0.2 to V
V
1-8
CC
-0.2 to 3.6 V
+ 0.2 (64Mb)
–40 to 85
(Note 2)
Ratings
Max
3.1
0.6
1.0
0
Min
CC
pSRAM_15_A2 February 3, 2005
I/O
—
—
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
+0.3 V
D
D
OUT
OUT
9-16
IN
IN
Max
10
8
Standby
Standby
Standby
Power
Active
Active
Active
Active
Active
Active
Active
Active
Unit
Unit
pF
pF
°C
W
Unit
V
V
V