AM29BDS640G SPANSION [SPANSION], AM29BDS640G Datasheet - Page 73

• Manufacturer Part Number: AM29BDS640G
• Description: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
FBGA Ball Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
3. Fortified BGA ball capacitance TBD.
Data Retention
October 1, 2003 25903C1
Parameter
Sector Erase Time
Chip Erase Time
Word Programming Time
Accelerated Word Programming Time
Chip Programming Time (Note 3)
Accelerated Chip Programming Time
Minimum Pattern Data Retention Time
programming typicals assumes a checkerboard pattern.
command. See Table
Parameter
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
13
Parameter
32 Kword
8 Kword
Parameter Description
Control Pin Capacitance
for further information on command definitions.
Output Capacitance
Input Capacitance
P r e l i m i n a r y
Typ (Note 1)
CC
11.5
= 1.65 V, 1,000,000 cycles.
0.4
0.4
54
48
16
4
Am29BDS640G
Max (Note 2)
210
120
144
Test Conditions
48
5
5
150°C
125°C
Test Setup
V
V
V
°
OUT
C, 1.8 V V
IN
IN
= 0
= 0
= 0
Unit
µs
µs
s
s
s
s
CC
, 1 million cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
4.2
5.4
3.9
Comments
Max
5.0
6.5
4.7
Years
Years
Unit
Unit
pF
pF
pF
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