AM29BDS640G SPANSION [SPANSION], AM29BDS640G Datasheet - Page 64
![no-image](/images/no-image-200.jpg)
AM29BDS640G
Manufacturer Part Number
AM29BDS640G
Description
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM29BDS640G.pdf
(78 pages)
- Current page: 64 of 78
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AC Characteristics
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CS# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode
7. AVD# must toggle during command sequence unlock cycles.
8. t
9. CLK must not have an active edge while WE# is at V
62
Configuration Register.
AH
Addresses
= 45 ns.
CLK
WE#
Data
OE#
AVD
CE#
V
CC
t
ACS
555h
t
AS
Figure 24. Alternate Synchronous Program Operation Timings
t
VCS
t
CAS
t
AH
t
CSW2
t
Program Command Sequence (last two cycles)
AVHC
t
WP
t
AVDP
(Note 8)
A0h
t
WC
t
WPH
PA
Am29BDS640G
P r e l i m i n a r y
IL
.
t
t
DH
DS
PD
t
CH
VA
t
WHWH1
Progress
Read Status Data
In
VA
25903C1 October 1, 2003
Complete
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