HYS64D128320GU-5-B Infineon, HYS64D128320GU-5-B Datasheet - Page 37

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HYS64D128320GU-5-B

Manufacturer Part Number
HYS64D128320GU-5-B
Description
184-Pin Unbuffered Dual-In-Line Memory Modules
Manufacturer
Infineon
Datasheet
Table 20
Byte
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Data Sheet
Description
Supported CAS
Latencies
CS Latencies
WE Latencies
SDRAM DIMM Module
Attributes
SDRAM Device
Attributes: General
Min. Clock Cycle Time
at CAS Latency = 2
Access Time from
Clock for
CL = 2
Minimum Clock Cycle
Time for CL = 1.5
Access Time from
Clock at
CL = 1.5
Minimum Row
Precharge Time
Minimum Row Act. to
Row Act. Delay
Minimum RAS to CAS
Delay
Minimum RAS Pulse
Width
Module Bank Density
(per Bank)
Addr. and Command
Setup Time
Addr. and Command
Hold Time
Data Input Setup Time 0.45 ns
Data Input Hold Time
SPD Codes for PC2700 Modules “–6” (cont’d)
t
t
RCD
RAS
t
RRD
CAS latency = 2 & 2.5 0C
CS latency = 0
Write latency = 1
unbuffered
7.5 ns
0.70 ns
not supported
not supported
18 ns
12 ns
18 ns
42 ns
128 MByte/256 MByte 20
0.75 ns
0.75 ns
0.45 ns
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
39
128MB
1 rank
HEX
01
02
20
C0
75
70
00
00
48
30
48
2A
75
75
45
45
64
Unbuffered DDR SDRAM Modules
256MB
1 rank
HEX
0C
01
02
20
C0
75
70
00
00
48
30
48
2A
40
75
75
45
45
64
256MB
1 rank
HEX
0C
01
02
20
C0
75
70
00
00
48
30
48
2A
40
75
75
45
45
72
512MB
2 ranks
HEX
0C
01
02
20
C0
75
70
00
00
48
30
48
2A
40
75
75
45
45
64
SPD Contents
V1.1, 2003-07
512MB
2 ranks
HEX
0C
01
02
20
C0
75
70
00
00
48
30
48
2A
40
75
75
45
45
72

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