HYS64D128320GU-5-B Infineon, HYS64D128320GU-5-B Datasheet - Page 26

• Manufacturer Part Number: HYS64D128320GU-5-B
• Description: 184-Pin Unbuffered Dual-In-Line Memory Modules
• Manufacturer: Infineon

7)
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
11) For each of the terms, if not already an integer, round to the next highest integer.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Data Sheet
t
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on
system performance (bus turnaround) degrades accordingly.
measured between
cycle time.
HZ
and
t
LZ
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
V
OH(ac)
and
V
OL(ac)
.
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
28
Unbuffered DDR SDRAM Modules
t
CK
is equal to the actual system clock
t
DQSS
Electrical Characteristics
.
V1.1, 2003-07