F25L04UA-100PG ESMT [Elite Semiconductor Memory Technology Inc.], F25L04UA-100PG Datasheet - Page 17

• Manufacturer Part Number: F25L04UA-100PG
• Description: 3V Only 4 Mbit Serial Flash Memory
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Note : 1. Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
OPERATING RANGE
TABLE 7: DC OPERATING CHARACTERISTICS
TABLE 8 : RECOMMENDED SYSTEM POWER-UP TIMINGS
1.
TABLE 9: CAPACITANCE (T
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. <5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
See Figures 19 and 20
Operating Supply Voltage
Ambient Operating
Temperature
Symbol
Parameter
I
I
I
I
I
V
V
V
V
T
T
C
C
DDR
DDW
SB
LI
LO
IL
IH
OL
OH
Symbol
PU-READ
PU-WRITE
OUT
IN
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
Parameter
1
1
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Pin Capacitance
Input Capacitance
V
V
DD
DD
Min to Read Operation
Min to Write Operation
Parameter
A
= 25°C, f=1 Mhz, other pins open)
V
V
T
A
DD
DD
(for F
(for F
Symbol
CLK
CLK
L
L
= 15 pF for ≧75MHz
= 30 pF for ≦50MHz
≦
= 100MHz)
75
Description
Parameter
0.7 V
V
MHz)
DD
Min
-0.2
DD
Limits
Max
2.7~3.6
3.2~3.6
0.8
0.2
15
40
25
Value
1
1
0~70
Units
mA
mA
µA
µA
µA
V
V
V
V
Unit
°C
V
V
V
V
V
I
I
CE =0.1 V
CE =V
CE =V
OL
OH
IN
OUT
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, VIN=V
Min
Max
DD
/0.9 V
DD
DD
DD
DD
, V
=V
DD
=V
, V
Publication Date: Jan. 2009
Revision:
DD
Test Conditions
DD
DD
Test Condition
or V
DD
DD
@33 MHz, SO=open
=V
Min
Minimum
V
Min
=V
V
OUT
SS
DD
IN
F25L04UA
DD
10
10
= 0V
Max
= 0V
Max
1.2
Maximum
Units
12 pF
6 pF
µs
µs
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