HYB18L256169BF QIMONDA [Qimonda AG], HYB18L256169BF Datasheet - Page 44

• Manufacturer Part Number: HYB18L256169BF
• Description: 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Table 22
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
1) 0 °C ≤
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
Data Sheet
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
T
C
≤ 70 °C (comm.); -25 °C ≤
Self Refresh Currents
1)2)
T
C
≤ 85 °C (extended);
Temperature
44
V
DD
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Max.
=
V
DDQ
= 1.70V to 1.95V
Symbol
I
DD6
HY[B/E]18L256169BF-7.5
typ.
510
340
225
205
400
285
200
180
340
250
185
170
256-Mbit Mobile-RAM
Electrical Characteristics
02032006-MP0M-7FQG
Values
Rev. 1.02, 2006-12
max.
600
470
400
–
–
–
–
–
–
–
–
–
Units
µA