HYB18L256169BF QIMONDA [Qimonda AG], HYB18L256169BF Datasheet - Page 22

• Manufacturer Part Number: HYB18L256169BF
• Description: 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

2.4.5.3
DQM may be used to suppress read data and place the output buffers into High-Z state. The generic timing
parameters as listed in
will continue as programmed.
Figure 20
2.4.5.4
A READ burst may be followed by or truncated with a WRITE command. The WRITE command can be performed
to the same or a different (active) bank. Care must be taken to avoid bus contention on the DQs; therefore it is
recommended that the DQs are held in High-Z state for a minimum of 1 clock cycle. This can be achieved by either
delaying the WRITE command, or suppressing the data-out from the READ by pulling DQM HIGH two clock cycles
prior to the WRITE command, as shown in
a write mask: when asserted HIGH, input data will be masked and no write will be performed.
Figure 21
Data Sheet
READ - DQM Operation
READ Burst - DQM Operation
READ to WRITE
READ to WRITE Timing
Table 10
also apply to this DQM operation. The read burst in progress is not affected and
Figure
21. With the registration of the WRITE command, DQM acts as
22
HY[B/E]18L256169BF-7.5
256-Mbit Mobile-RAM
Functional Description
02032006-MP0M-7FQG
Rev. 1.02, 2006-12