LH28F160S5-L SHARP [Sharp Electrionic Components], LH28F160S5-L Datasheet - Page 49

• Manufacturer Part Number: LH28F160S5-L
• Description: 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
• Manufacturer: SHARP [Sharp Electrionic Components]

6.2.7 RESET OPERATIONS
NOTES :
1. These specifications are valid for all product versions
2. If RP# is asserted while a block erase, full chip erase,
SYMBOL
t
t
t
PLPH
PLRH
5VPH
(packages and speeds).
(multi) word/byte write or block lock-bit configuration
operation is not executing, the reset will complete within
100 ns.
STS (R)
RP# (P)
STS (R)
RP# (P)
RP# (P)
RP# Pulse Low Time (If RP# is tied to V
RP# Low to Reset during Block Erase, Full Chip Erase,
(Multi) Word/Byte Write or Block Lock-Bit Configuration
V
this specification is not applicable)
CC
V
CC
4.5 V to RP# High
High Z
V
V
V
High Z
V
V
V
5 V
V
V
V
OL
IH
IL
OL
IH
IL
IL
IH
IL
PARAMETER
t
t
Fig. 19 AC Waveform for Reset Operation
PLPH
PLPH
(A) Reset During Read Array Mode
(C) V
(B) Reset During Block Erase, Full Chip Erase, (Multi) Word/Byte Write
Reset AC Specifications
CC
t
Power Up Timing
5VPH
t
PLRH
CC
,
- 49 -
or Block Lock-Bit Configuration
3. A reset time, t
4. When the device power-up, holding RP#-low minimum
NOTE
going High Z or RP# going high until outputs are valid.
100 ns is required after V
range and also has been in stable there.
2, 3
4
(NOTE 1)
PHQV
MIN.
100
100
V
, is required from the latter of STS
CC
= 5.0±0.5 V
LH28F160S5-L/S5H-L
CC
has been in predefined
MAX.
13.1
UNIT
ns
µs
ns