LH28F160S5-L SHARP [Sharp Electrionic Components], LH28F160S5-L Datasheet

LH28F160S5-L

Manufacturer Part Number

LH28F160S5-L

Description

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Manufacturer

SHARP [Sharp Electrionic Components]

Datasheet

1.LH28F160S5-L.pdf (55 pages)

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DESCRIPTION

The LH28F160S5-L/S5H-L flash memories with

Smart 5 technology are high-density, low-cost,

nonvolatile, read/write storage solution for a wide

range of applications, having high programming

performance is achieved through highly-optimized

page buffer operations. Their symmetrically-blocked

architecture, flexible voltage and enhanced cycling

capability provide for highly flexible component

suitable for resident flash arrays, SIMMs and

memory

capabilities provide for an ideal solution for code +

data storage applications. For secure code storage

applications, such as networking, where code is

either directly executed out of flash or downloaded

to DRAM, the LH28F160S5-L/S5H-L offer three

levels of protection : absolute protection with V

GND, selective hardware block locking, or flexible

software block locking. These alternatives give

designers ultimate control of their code security

needs. The LH28F160S5-L/S5H-L are conformed

to the flash Scalable Command Set (SCS) and the

Common Flash Interface (CFI) specification which

enable universal and upgradable interface, enable

the highest system/device data transfer rates and

minimize device and system-level implementation

costs.

FEATURES

• Smart 5 technology

• High speed write performance

• Common Flash Interface (CFI)

• Scalable Command Set (SCS)

LH28F160S5-L/S5H-L

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

– 5 V V

– Two 32-byte page buffers

– 2 µs/byte write transfer rate

– Universal & upgradable interface

cards.

Their

enhanced

suspend

- 1 -

• High performance read access time

• Enhanced automated suspend options

• Enhanced data protection features

• SRAM-compatible write interface

• User-configurable x8 or x16 operation

• High-density symmetrically-blocked architecture

• Enhanced cycling capability

• Low power management

• Automated write and erase

• ETOX

• Packages

ETOX is a trademark of Intel Corporation.

Under development

16 M-bit (2 MB x 8/1 MB x 16) Smart 5

LH28F160S5-L70

– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)

LH28F160S5H-L70

– 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)

LH28F160S5-L10/S5H-L10

– 100 ns (5.0±0.5 V)

– Write suspend to read

– Block erase suspend to write

– Block erase suspend to read

– Absolute protection with V

– Flexible block locking

– Erase/write lockout during power transitions

– Thirty-two 64 k-byte erasable blocks

– 100 000 block erase cycles

– 3.2 million block erase cycles/chip

– Deep power-down mode

– Automatic power saving mode decreases I

– Command user interface

– Status register

– 56-pin TSOP Type I (TSOP056-P-1420)

– 56-pin SSOP (SSOP056-P-0600)

– 64-ball CSP (FBGA064-P-0811)

– 64-pin SDIP (SDIP064-P-0750)

Flash Memories (Fast Programming)

in static mode

V nonvolatile flash technology

Normal bend/Reverse bend

LH28F160S5-L/S5H-L

[LH28F160S5-L]

= GND

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