HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 615
HD6412340
Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet
1.HD6412340.pdf
(907 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD6412340TE20
Manufacturer:
SANYO
Quantity:
20 000
Part Number:
HD6412340TE20
Manufacturer:
HITACHI/日立
Quantity:
20 000
- Current page: 615 of 907
- Download datasheet (4Mb)
Reprogramming an address that
has already been programmed
Auto-erase
(all of flash memory)
Auto-program
End
Figure 17.35 Reprogramming an Address that has Already Been Programmed
17.14
Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
writer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
Hitachi microcomputer device types with 128-kbyte on-chip flash memory.
Do not select the HN28F101 setting for the PROM programmer, and only use the specified socket
adapter. Incorrect use will result in damaging the device.
Powering on and off (see figures 17.36 to 17.38): Do not apply a high level to the FWE pin until
V
has stabilized. Also, drive the FWE pin low before turning off V
.
CC
CC
When applying or disconnecting V
, fix the FWE pin low and place the flash memory in the
CC
hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery. If these timing requirements are not satisfied, the microcomputer
experience program runaway, possibly resulting in excessive programming and erasing that could
cause the memory cell to no longer operate properly.
FWE pin application/disconnection (see figure 19.36 to figure 19.38): FWE pin application
should be carried out when MCU operation is in a stable condition. If MCU operation is not
stable, fix the FWE pin low and set the protection state.
603
Related parts for HD6412340
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
LOW FREQUENCY POWER AMPLIFIER
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON SPEED POWER SWITCHING
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet: