CY7C1470BV25_11 CYPRESS [Cypress Semiconductor], CY7C1470BV25_11 Datasheet - Page 22

• Manufacturer Part Number: CY7C1470BV25_11
• Description: 72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined SRAM with NoBL Architecture
• Manufacturer: CYPRESS [Cypress Semiconductor]

Switching Waveforms
Figure 2
Notes
Document Number: 001-15032 Rev. *I
24. For this waveform ZZ is tied LOW.
25. When CE is LOW, CE
26. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
shows read-write timing waveform.
Data
CEN
BW
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
1
WRITE
D(A1)
is LOW, CE
A1
1
t
t
CENH
t
AH
CEH
2
WRITE
is HIGH, and CE
D(A2)
2
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
[24, 25, 26]
3
3
is LOW. When CE is HIGH,CE
t
DH
Figure 2. Read/Write Timing
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
is HIGH, CE
UNDEFINED
Q(A4+1)
BURST
READ
Q(A3)
CY7C1472BV25, CY7C1474BV25
6
t
DOH
2
is LOW, or CE
t
OEHZ
WRITE
D(A5)
Q(A4)
A5
7
t
OEV
3
t
OELZ
is HIGH.
Q(A6)
Q(A4+1)
READ
A6
8
t
t
DOH
CHZ
CY7C1470BV25
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 22 of 29
10
Q(A6)
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