AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet - Page 7

• Manufacturer Part Number: AP4525GEH_08
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

P-Channel
100
0.1
12
10
50
40
30
20
10
1
8
4
0
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
-V
Single Pulse
=-5V
-V
4
T
DS
Q
c
GS
2
=25
G
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Total Gate Charge (nC)
1
o
j
=25
C
V
8
I
DS
D
o
C
= - 2 0 V
= -5 A
4
12
T
j
=150
10
6
o
C
16
100ms
100us
10ms
1ms
DC
1s
100
20
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
10
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Single Pulse
0.02
0.01
Duty factor=0.5
G
0.05
5
0.2
0.1
0.0001
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
G
GD
Charge
17
0.01
AP4525GEH
P
DM
Duty factor = t/T
Peak T
21
j
= P
f=1.0MHz
t
0.1
DM
T
x R
25
thjc
C
+ T
C
C
Q
C
rss
oss
iss
29
1
7