AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet - Page 2

• Manufacturer Part Number: AP4525GEH_08
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
N-CH Electrical Characteristics@ T
Source-Drain Diode
AP4525GEH
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=70
o
2
C)
j
=25
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=6A
=6A
=15A, V
=6A, V
=3Ω,V
=3.3Ω
o
=V
=10V, I
=40V, V
=32V, V
=20V
=20V
=25V
=0V, I
=10V, I
=4.5V, I
=±16V
=4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
GS
, I
D
GS
GS
D
=250uA
=0V
D
D
D
=250uA
GS
GS
=10V
=6A
=6A
=0V
=4A
=0V
=0V
D
=1mA
Min.
Min.
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.03
Typ.
580
100
1.5
20
20
70
20
15
6
9
4
7
4
2
-
-
-
-
-
-
-
-
Max. Units
Max. Units
±30
930
1.8
28
32
25
14
3
1
3
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
uA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
2