AP4953GM_08 A-POWER [Advanced Power Electronics Corp.], AP4953GM_08 Datasheet
AP4953GM_08
Manufacturer Part Number
AP4953GM_08
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet
1.AP4953GM_08.pdf
(5 pages)
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
D1
1
D1
SO-8
3
3
D2
D2
S1
G1
S2
G2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
- 30
- 20
+20
- 5
- 4
DS(ON)
2
DSS
Value
D1
S1
62.5
G2
AP4953GM
53mΩ
200810075
-30V
Units
W/℃
℃/W
-5A
Unit
W
℃
℃
V
V
A
A
A
D2
S2
1
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AP4953GM_08 Summary of contents
Page 1
Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The ...
Page 2
AP4953GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...
Page 3
T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 70 I =-4A D ℃ ...
Page 4
AP4953GM - -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 =25 C ...
Page 5
ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4953GM YWWSSS SYMBOLS ...