AP13P15GH A-POWER [Advanced Power Electronics Corp.], AP13P15GH Datasheet

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AP13P15GH

Manufacturer Part Number
AP13P15GH
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet
▼ ▼ ▼ ▼ Lower On-resistance
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching Characteristic
▼ ▼ ▼ ▼ RoHS Compliant
Data and specifications subject to change without notice
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as high efficiency switching DC/DC converters and
DC motor control. The through-hole version (AP13P15GJ) is available
for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
-150
0.77
±20
-8.2
-13
52
96
DS(ON)
DSS
G
Value
AP13P15GH/J
110
D
1.3
G
S
D S
TO-252(H)
TO-251(J)
200810051-1/4
300mΩ
-150V
-13A
Units
W/℃
Units
℃/W
℃/W
W
V
V
A
A
A

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AP13P15GH Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP13P15GH/J Pb Free Plating Product BV -150V DSS R 300mΩ DS(ON) I -13A TO-252( TO-251(J) ...

Page 2

... AP13P15GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =-10V G =25 ℃ ℃ ℃ ℃ 1.8 1.3 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1.1 o =25 C 0.7 0.3 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP13P15GH/J -10V o C -7.0V -5.0V -4. . Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP13P15GH - -120V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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