AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet - Page 4

• Manufacturer Part Number: AP4525GEH_08
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

N-Channel
AP4525GEH
120
100
50
40
30
20
10
80
60
40
20
0
14
12
10
8
6
4
2
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0
0.2
1
V
Reverse Diode
V
DS
V
T
SD
GS
0.4
4
, Drain-to-Source Voltage (V)
j
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
2
0.6
o
C
3
0.8
6
T
A
T
= 25
I
A
D
=25
1
T
= 4 A
4
o
j
=25
C
o
C
1.2
8
o
C
V
5
G
1.4
=3.0V
7.0V
5.0V
4.5V
10V
1.6
6
10
1.6
1.2
0.8
1.6
1.2
0.8
0.4
50
40
30
20
10
0
25
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
A
= 6 A
=10V
= 150
1
V
v.s. Junction Temperature
Junction Temperature
50
o
DS
T
C
T
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
75
3
50
100
4
100
o
o
125
C)
C)
V
5
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
6
4