AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet - Page 5

• Manufacturer Part Number: AP4525GEH_08
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

N-Channel
100
0.1
10
12
50
40
30
20
10
1
0
8
4
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
I
DS
DS
D
=6A
=20V
=5V
Single Pulse
T
V
A
V
Q
5
=25
2
GS
DS
G
T
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
j
o
1
=25
C
o
C
10
4
T
j
=150
10
o
15
C
6
100ms
100us
10ms
1ms
DC
1s
20
100
8
Fig 10. Effective Transient Thermal Impedance
0.01
1000
0.1
100
10
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.01
V
0.05
Duty factor=0.5
G
0.2
0.1
Single Pulse
5
0.0001
Q
V
GS
DS
9
, Drain-to-Source Voltage (V)
0.001
Q
t , Pulse Width (s)
Q
G
13
GD
Charge
17
0.01
AP4525GEH
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
T
f=1.0MHz
x R
25
thjc
+ T
C
C
C
Q
C
oss
iss
rss
1
29
5