AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet - Page 6

• Manufacturer Part Number: AP4525GEH_08
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

P-Channel
AP4525GEH
200
170
140
110
50
40
30
20
10
80
50
20
0
12
10
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0.1
Fig 5. Forward Characteristic of
T
A
= 25
0.3
1
o
Reverse Diode
T
-V
C
-V
-V
j
=150
4
SD
GS
DS
0.5
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
2
, Drain-to-Source Voltage (V)
o
C
0.7
3
6
T
I
0.9
D
A
= -3 A
=25
T
j
=25
4
o
C
1.1
o
8
C
V
G
5
= - 3.0V
1.3
-7.0V
-5.0V
-4.5V
-10V
10
1.5
6
1.6
1.4
1.2
1.0
0.8
1.6
1.2
0.8
0.4
50
40
30
20
10
0
25
-50
0
Fig 2. Typical Output Characteristics
V
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
G
D
A
= -10V
= -5A
= 150
T
v.s. Junction Temperature
Junction Temperature
-V
50
o
j
C
T
, Junction Temperature (
DS
2
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
75
4
50
100
o
C)
6
100
o
V
125
C)
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
8
150
150
6