M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 69

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M29DW641F70N1

Manufacturer Part Number
M29DW641F70N1
Description
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
M29DW641F
Table 33.
Address
4Ah
4Bh
4Ch
4Dh
4Eh
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Fh
50h
57h
58h
59h
Primary Algorithm-specific extended Query table
00B5h
00C5h
0050h
0052h
0049h
0031h
0033h
0000h
0002h
0001h
0001h
0007h
0077h
0000h
0002h
0001h
0001h
0004h
0017h
0030h
Data
Primary Algorithm extended Query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
Block Protection
00 = not supported, x = number of sectors in per group
Temporary Block Unprotect
00 = not supported, 01 = supported
Block Protect /Unprotect
07 = M29DW641F
Simultaneous Operations,
x = number of blocks (excluding Bank A)
Burst mode, 00 = not supported, 01 = supported
Page mode, 00 = not supported, 01 = 4 page Word, 02 = 8 page
Word
V
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
V
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
Top/Bottom Boot Block Flag
00h = uniform device
01h = 8 x8 Kbyte Blocks, Top and Bottom Boot with Write Protect
02h = Bottom boot device
03h = Top Boot Device
04h = Both Top and Bottom
Program Suspend, 00 = not supported, 01 = supported
Bank Organization, 00 = data at 4Ah is zero
X = number of banks
Bank A information
X = number of blocks in Bank A
Bank B information
X = number of blocks in Bank B
PP
PP
Supply Minimum Program/Erase voltage
Supply Maximum Program/Erase voltage
Description
Common Flash Interface (CFI)
Value
11.5V
12.5V
119
Yes
Yes
Yes
T/B
Yes
"R"
"P"
"1"
"3"
No
23
48
"I"
2
1
7
4
69/80

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