M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 54

• Manufacturer Part Number: M29DW641F70N1
• Description: 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
Table 22.
1. Sampled only, not 100% tested.
Figure 15. Toggle and alternative toggle bits mechanism, Chip Enable controlled
1. The Toggle bit is output on DQ6.
2. The Alternative Toggle bit is output on DQ2.
3. Refer to
54/80
A0-A21
G
DQ2
E
Symbol
t
t
EHRL
t
VCHWL
t
t
t
t
t
t
t
t
t
t
EHWH
DVEH
EHDX
EHGL
GHEL
WLEL
ELEH
EHEL
ELAX
(1)
AVAV
AVEL
/DQ6
(1)
Table 20: Read AC characteristics
(2)
Read Operation outside the Bank
Being Programmed or Erased
Write AC characteristics, Chip Enable controlled
Being Programmed or Erased
Address Outside the Bank
t
t
t
t
BUSY
t
t
OEH
t
Alt
t
t
t
t
CPH
t
VCS
WC
WH
WS
DH
AS
DS
CP
AH
Address Valid to Next Address Valid
Address Valid to Chip Enable Low
Input Valid to Chip Enable High
Chip Enable Low to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Chip Enable Low to Address Transition
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
Output Enable High Chip Enable Low
V
Write Enable Low to Chip Enable Low
CC
Data
High to Write Enable Low
for the value of t
Parameter
tAXEL
Being Programmed or Erased
Read Operation in the Bank
Being Programmed or Erased
Alternative Toggle Bit
tELQV
Address in the Bank
ELQV
Toggle/
.
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Alternative Toggle Bit
tELQV
Toggle/
60
60
45
45
30
45
30
50
0
0
0
0
0
0
Read Operation Outside the Bank
Being Programmed or Erased
Address Outside the Bank
Being Programmed or Erased
70
70
45
45
30
45
30
50
0
0
0
0
0
0
Data
M29DW641F
AI11302
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns